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M06300 - SEMI M63 - Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction Revision:SEMI M63-0306 - Superseded processing may be specified in

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Description

processing may be specified in terms of either material type

This Specification covers the content

This Standard can be used as the specification sheet for tape frame upon purchasing

SEMI E78 — Guide to Assess and Control Electrostatic Discharge (ESD) and Electrostatic Attraction (ESA) for Equipment

M06300 - SEMI M63 - Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction Revision:SEMI M63-0306 - Superseded processing may be specified inThis Test Method describes the use of high resolution X ray diffraction (HRXRD) as a means of measuring the Al fraction in an AlGaAs epilayer on GaAs substrates, by defining the experimental method and explaining the analysis. This Test Method addresses measurement of the composition of unrelaxed, undoped AlGaAs epilayers on <001> oriented GaAs substrates. Principles are given for a standardized measurement method. There are differing parameters for

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