HB01400 - SEMI HB14 - Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate Revision:SEMI HB14-0223 - Current 本試験方法を用いる場合は，フィッティングの温度を23～125°C（73～257°F）の範囲で保持させなければならない。

本試験方法を用いる場合は，フィッティングの温度を23～125°C（73～257°F）の範囲で保持させなければならない。

2項に対して行われた。

Utilities and Materials Used by Semiconductor Manufacturing EquipmentSEMI S26 — Environmental

a conventional pellicle film cannot be placed in front of EUVL reticles

HB01400 - SEMI HB14 - Test Method for Determining Geometrical Parameters of Patterns on Patterned Sapphire Substrate Revision:SEMI HB14-0223 - Current 本試験方法を用いる場合は，フィッティングの温度を23～125°C（73～257°F）の範囲で保持させなければならない。Because there are various requirements and measurement methods for patterned sapphire substrate (PSS) in the LED industry, a standardized measurement method of PSS needs to be established so that customers and PSS suppliers can work together smoothly. It is necessary to establish a standardized measurement method of PSS so that PSS suppliers will be able to provide clear and consistent product information to customers. Provides a measurement method